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| IMAGE SENSOR CCD area image sensor S8980, S8981-02 Front-illuminated FFT-CCDs for X-ray imaging S8980 is an FFT-CCD image sensor ideal for intra-oral X-ray imaging in dental diagnosis. S8980 has 1.5 mega (1500 x 1000) pixels each of which is 20 x 20 m. The fiber optic plate (FOP) used as an input window is as thin as 1.5 mm but highly resistant to X-ray irradiation, making S8980 very reliable even over a long-term operation. The scintillator coated on the FOP is optimized to have high X-ray sensitivity and high resolution (20 Lp/mm). S8981-02 is an easy-to-use X-ray imaging module using S8980, with added functions such as a cable assembly and X-ray trigger circuit. S898102 is advanced type for S8981 and adapted both AC and DC X-ray sources. Features Applications For use under 100,000 shots (60 kVp, 30 mR X-ray irradiation) l Resolution: 20 Lp/mm l 1500 (H) x 1000 (V) pixel format l Pixel size: 20 x 20 m l Coupled with FOS for X-ray imaging l 100 % fill factor l Low dark signal l Low readout noise l MPP operation l AC/DC X-ray source adapted l Sensor has X-ray monitoring photodiode l Compactness 5.1 mm thickness excluding I/O connector part l High dynamic range: 12 bit l Long-term stability l General X-ray imaging l Non-destructive inspection l Intra-oral X-ray imaging in dental diagnosis s Selection guide Type No. S8980 S8981-02 Cooling Non-cooled Number of total pixels 1508 x 1002 Number of active pixels 1500 x 1000 Active area [mm (H) x mm (V)] 30 x 20 s General ratings Parameter CCD structure Fill factor Number of active pixels Pixel size Active area Vertical clock phase Horizontal clock phase Output circuit Dimensional outline Reliability Window Other S8981-02 Full frame transfer 100 % 1500 (H) x 1000 (V) 20 (H) x 20 (V) m 30 (H) x 20 (V) mm 2 phase 2 phase Emitter follower without load resistance 35.5 (H) x 23.2 (V) mm 38.7 (H) x 26.3 (V) mm 100,000 shots at 60 kVp, 30 m Roentgen Scintillator on 1.5 mm FOP MPP mode (low dark current operation), module (S8981-02) S8980 1 CCD area image sensor s Absolute maximum ratings (Ta=25 C) Parameter Storage temperature Operating temperature OD voltage RD voltage SG voltage OG voltage RG voltage TG voltage Vertical clock voltage Horizontal clock voltage Vcc voltage Symbol Tstg Topr VOD VRD VSG VOG VRG VTG VP1V, VP2V VP1H, VP2H Vcc Min. -20 0 -0.5 -0.5 -15 -15 -15 -15 -15 -15 0 Typ. - S8980, S8981-02 Max. +70 +40 +20 +18 +15 +15 +15 +15 +15 +15 +7 Unit C C V V V V V V V V V s Operating conditions (MPP mode, Ta=25 C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Substrate voltage Vertical shift register clock voltage Horizontal shift register clock voltage Summing gate voltage Reset gate voltage Transfer gate voltage +5 V power supply voltage Symbol VOD VRD VOG Vss VP1VH, VP2VH VP1VL, VP2VL VP1HH, VP2HH VP1HL, VP2HL VsGH VsGL VRGH VRGL VTGH VTGL Vcc Min. 12 12 -0.5 0 -9 0 -9 0 -9 0 -9 0 -9 4.75 Typ. 15 13 2 0 3 -8 3 -8 3 -8 3 -8 3 -8 5 Max. 14 5 6 -7 6 -7 6 -7 6 -7 6 -7 5.25 Unit V V V V V V V V V V V V V V V High Low High Low High Low High Low High Low s Electrical characteristics (Ta=25 C) Parameter Symbol Remark Min. Typ. Max. Signal output frequency fc *1 1 5 Vertical shift register capacitance CP1v, CP2v 60,000 S8980 350 Horizontal shift CP1H, CP2H register capacitance 550 S8981-02 S8980 20 Summing gate capacitance CsG S8981-02 220 S8980 20 Reset gate capacitance CRG S8981-02 220 S8980 250 Transfer gate capacitance CTG S8981-02 450 Charge transfer efficiency CTE *2 0.99995 0.99998 DC output level VOut *3 5 8 11 Output impedance Zo *3 500 Power dissipation P *3 *4 75 S8980 1 +5 V power supply current Icc S8981-02 2 *1: S8980 only. In case of S8981-02, maximum frequency is strongly depend on peripheral circuit and cable length. *2: Measured at half of the full well capacity. CTE is defined per pixel. *3: VOD=15 V *4: Power dissipation of the on-chip amplifier. Unit MHz pF pF pF pF pF V mW mA 2 CCD area image sensor S8980, S8981-02 Unit keV/ee /pixel/s e-rms % - s Electrical and optical characteristics (Ta=25 C, unless otherwise noted, VOD=15 V) Parameter Symbol Remark Min. Typ. Max. Vertical 100 200 Full well capacity Horizontal Fw 300 Summing 600 CCD node sensitivity Sv *5 1.0 1.4 Dark current (MPP mode) DS *6 250 2,500 Readout noise Nr *7 60 Dynamic range DR *8 3333 X-ray response non-uniformity XRNU *9, *10 10 30 White spots 20 Point defects *12 Black spots 20 11 Blemish * Cluster defects *13 3 Column defects *14 1 X-ray resolution *9 15 20 R *5: VOD=15 V, RL(load resistance of emitter follower)=1 k. *6: Dark signal doubles for every 5 to 7 C. *7: -40 C, operating frequency is 1 MHz. *8: Dynamic range = Full well capacity / Readout noise *9: X-ray irradiation of 60 kVp, measured at half of the full well capacity. *10: XRNU (%) = Noise / Signal x 100 Noise: Fixed pattern noise (peak to peak) In the range that excludes 5 pixels from edges to the center at every position. *11: Refer to "Characteristics and use of FFT-CCD area image sensor" of technical information. *12: White spots > 10 times of Max. Dark signal (2,500 e-/pixel/s). Black spots > 50 % reduction in response relative to adjacent pixels, measured at half of the full well capacity. *13: continuous 2 to 9 point defects. *14: continuous > 10 point defects. Lp/mm s Device structure 1 2 3 ...... 998 999 1000 2 3 P1V' P2V' TG' SS OS OD RD RG' OG SG' P1H' P2H' ...... D1 D2 S1 S2 S3 S4 S5 S6 ...... PD KMPDC0163EA s Pixel format Blank 2 Optical black 2 Left Horizontal Direction Effective 1500 Right Optical black 0 Blank 2 Isolation 1 Isolation 1 S1499 1496 1497 S1500 1498 S1501 S1502 1499 1500 S1503 S1504 D3 VS1 VS2 VS3 VS4 D4 X-RAY IRRADIATION MONITORING PHOTODIODE Top Vertical direction Bottom Isolation Effective Isolation 1 1000 1 VS999 VS1001 VS1000 VS1002 3 CCD area image sensor s On-board circuit OD 51 k 2.2 S8980, S8981-02 7.5 k 10 P1V 10 P2V 10 TG 10 P1H 10 P2H 10 SG 100 RG GND RG' SS PD Trigger A (S8980) SG' P2H' OS Vcc TG' CCD CHIP P1H' 2.2 P2V' RD OD P1V' OG 0.1 RD molex 52745-1417 Vcc Trigger A SG P2H P1H Reserve RG RD OD OUT GND TG P2V P1V 1 2 3 4 5 6 7 8 9 10 11 12 13 14 KMPDC0214EB 10 k OUT Trigger B (S8981-02) s Timing chart PRE-INTEGRATION PERIOD AC X-RAY EXPOSURE (Trigger A) *15 DC X-RAY EXPOSURE (Trigger A) *15 Trigger B (S8981-02) *16 P1V VD1 INTEGRATION PERIOD READOUT PERIOD Tpwv VD: VERTICAL DUMMY 1 2, 3, ... , 999, 1000, VD2 P2V, TG *17 P1H P2H, SG RG OUT Tovr P2V, TG Tpwh, Tpws ENLARGED VIEW P1H P2H, SG RG OUT D1 D2 S2, S3, S4, ... , S1502, S1503, S1504 S1 D3 D4 Tpwr *15: Trigger A (S8980) is the same as AC/DC X-ray exposure form. *16: Low active trigger pulse *17: TG terminal can be short-circuited to P2V terminal. KMPDC0215EA KMPDC0215EA Parameter Symbol Remark Pulse width tpwv *18 P1V, P2V, TG Rise and fall time tprv, tpfv Pulse width tpwh P1H, P2H Rise and fall time tprh, tpfh *18 Duty ratio Pulse width tpws SG Rise and fall time tprs, tpfs Duty ratio Pulse width tpwr RG Rise and fall time tprr, tpfr TG-P1H Overlap time tovr *18: Symmetrical pulses should be overlapped at 50 % of maximum amplitude. Min. 30 200 100 5 100 3 10 3 18 Typ. 60 500 50 500 50 50 36 Max. - Unit s ns ns ns % ns ns % ns ns s 4 CCD area image sensor s Dimensional outlines (unit: mm) S8980 35.5 0.5 3.0 C1.0 3.6 FOP 31.5 30.0 1.9 0.55 S8980, S8981-02 1.0 ACTIVE AREA SCINTILLATOR 14 molex 52745-1417 6.55 a 23.2 0.4 1 FOP 22.1 19.7 20.0 CONNECTOR 0.55 19.5 FOP CCD CHIP ALUMINA SUBSTRATE 3.1 0.3 1.5 1.0 2.0 FOP 1.5 KMPDA0169EB s Pin connections (Connector on CCD package) Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Symbol Vcc Trigger A SG P2H P1H Reserve RG RD OD OUT GND TG P2V P1V Description Analog power +5 V Trigger A output Summing gate CCD horizontal register clock-2 CCD horizontal register clock-1 Reset gate Reset drain Output transistor drain Signal output Ground Transfer gate CCD vertical register clock-2 CCD vertical register clock-1 Remark Should be opened 5 CCD area image sensor S8980, S8981-02 S8981-02 q Entire view MDR CONNECTOR (3M 10136-3000PE; 36 TERMINALS) FERRITE CCD SENSOR CABLE 2000 PIN No.1 2 17 18 19 20 35 36 SHROUD KMPDA0189EA * The shield of cable and the shroud of MDR connector are electrically connected each other. They are short-circuited, so there is no electrical contact to any other positions. q CCD sensor ( 38.7 6.1 ) 32.6 13.6 4.0 10.2 7.4 5.1 3.15 26.3 20.0 3.5 3.5 CABLE 3.15 (4 x) R2.5 3.5 30.0 5.2 ACTIVE AREA 9.0 6.0 1.3 R2.0 R2.0 1.0 4.0 1.3 5.0 5.1 2.3 8.9 1.5 (30 degrees) KMPDA0190EA 6 CCD area image sensor s Pin connections Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Symbol GND Vcc SG Trigger B RG NC Reserve NC RD NC OD NC OUT NC GND NC P1V Reserve Reserve P2H NC P1H NC GND NC RD NC OD NC GND NC OUT NC P2V NC TG Description Ground +5 V power supply Summing gate Trigger B output Reset gate S8980, S8981-02 Remark Same timing as P2H Should be opened Reset drain Output transistor drain Sensor output Ground CCD vertical register clock-1 Should be opened Should be opened CCD horizontal register clock-2 CCD horizontal register clock-1 Ground Reset drain Output transistor drain Ground Sensor output CCD vertical register clock-2 Transfer gate Same timing as P2V s Precautions for use (Electrostatic countermeasures) *Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. *Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. *Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. *Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Cat. No. KMPD1084E02 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Sept. 2006 DN 7 |
Price & Availability of S8981-02
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